[内容简介]
Ultra-low voltage large-scale integrated circuits (LSIs) in nano-scale technologies are needed to: Meet the needs of a rapidly growing mobile cell phone market - Offset a significant increase in the power dissipation of high-end microprocessor units
Low power large capacity memories are a necessary component of low voltage LSIs. Many challenges arise in the process of achieving such memories as their devices and voltages are scaled down below 100nm and sub-1-V. A high signal-to-noise (S/N) ratio design is necessary to deal with small signal voltages from low-voltage memory cells in the presence of large noise sources in a high-density memory-cell array. Moreover, innovative circuits and devices are needed to resolve the increasing problems of leakage currents and variability in both speed and leakage. Since the solutions to these problems lie between different fields, (e.g., digital and analog, SRAM and DRAM) a multidisciplinary approach is needed.
[目次]
An Introduction to LSI Design.
- Ultra-Low Voltage Nano-Scale DRAM Cells.
- Ultra-Low Voltage Nano-Scale SRAM Cells.
- Leakage Reduction for Logic Circuits in RAMs.
- Variability Issue in the Nanometer Era.
- Reference Voltage Generators.
- Voltage Down-Converters.
- Voltage Up-Converters and Negative Voltage Generators.
- High-Voltage Tolerant Circuits.