[内容简介]《纳米结构：理论与模拟（影印版）》主要介绍了纳米结构体系中电子结构、介电性质、光学转换、电学输运的基本物理概念、理论方法、重要实验结果及其理论分析与模拟计算，是一本较为系统的、有使用价值的理论专著。纳米科学的进展正在越来越依赖计算与模拟。这取决于三个因素的结合：减小纳米物质的尺寸、增强计算机的能力、发展新的理论。《纳米结构：理论与模拟（影印版）》对从事纳米科技多学科交叉领域的高年级本科生、研究生及相关的科研教学人员具有重要的参考价值.
[目次]1 General Basis for Computations and Theoretical Models
1.1 Ab initio One-Particle Theories for the Ground State
1.2 Quasi-particles and Excitons
1.3 Semi-empirical Methods
2 Quantum Confined Systems
2.1 Quantum Confinement and Its Consequences
2.2 Computational Techniques
2.3 Comparison Between Different Methods
2.4 Energy Gap of Semiconductor Nanocrystals
2.5 Confined States in Semiconductor Nanocrystals
2.6 Confinement in Disordered and Amorphous Systems
3 Dielectric Properties
3.1 Macroscopic Approach: The Classical Electrostatic Theory
3.4 Concept of Dielectric Constant for Nanostructures
3.5 Charging of a Nanostructure
4 Quasi-particles and Excitons
4.1 Basic Considerations
4.2 Excitons in the Envelope Function Approximation
4.3 Excitons in More Refined Semi-empirical Approaches
4.4 Quantitative Treatment of Quasi-particles
4.5 Quantitative Treatment of Excitons
4.6 Charging Effects and Multi-excitons
4.7 Conclusion
5 Optical Properties and Radiative Processes
5.1 General Formulation
5.4 Optical Properties of Si and Ge Nanocrystals
6 Defects and Impurities
6.1 Hydrogenic Donors
6.2 Deep Level Defects in Nanostructures
6.3 Surface Defects: Si Dangling Bonds
6.4 Surface Defects: Self-Trapped Excitons
6.5 Oxygen Related Defects at Si-SiO2 Interfaces
7 Non-radiative and Relaxation Processes
7.1 Multi-phonon Capture at Point Defects
7.2 Auger Recombination
7.3 Hot Carrier Relaxation: Existence of a Phonon Bottleneck
8 Transport
8.1 Description of the Systems and of the Boundary Conditions
8.2 Weak Coupling Limit
8.3 Beyond Perturbation Theory
8.4 Electron-Electron Interactions Beyond the Orthodox Theory.
8.5 Transport in Networks of Nanostructures
A Matrix Elements of the Renormalizing